| Ident. | Authors (with country if any) | Title |
|---|
| 000511 |
| Magnetic-field-induced recovery of resonant tunneling into a disordered quantum well subband |
| 000605 |
| Spatial mapping of the electron eigenfunctions in InAs self-assembled quantum dots by magnetotunnelling |
| 000632 |
| Magnetotunnelling spectroscopy of the electron states in the quantum well with embedded self-assembled quantum dots: studies in magnetic fields up to 28 T |
| 000648 |
| Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures |
| 000680 |
| Effective mass anisotropy of r-electrons in GaAs/AlGaAs quantum well with InAs layer |
| 000753 |
| Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy |
| 000951 |
| Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling |
| 000975 |
| Magneto-tunnelling spectroscopy for spatial mapping of orbital wavefunctions of the ground and excited electronic states in self-assembled quantum dots |
| 000A67 |
| Stark shift in electroluminescence of individual InAs quantum dots |
| 000C94 |
| Quasielastic light scattering in the near IR from photoexcited electron-hole plasma created in a GaAs layer with embedded InAs quantum dots |
| 000D94 |
| Enhancement of luminescence intensity induced by 1.06 μm excitation in InAs/GaAs quantum dots |
| 000E48 |
| Electronic structure of self-assembled InAs quantum dots in GaAs matrix |
| 000E50 |
| Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Γ-X crossover |
| 000E63 |
| Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots |
